It has published details, in a blog of double data rate-4 (DDR4) memory in 128-gigabyte (GB) modules. These, when installed in enterprise servers and data centres, could significantly speed the rate of processing in cloud computing applications, slashing response times, boosting productivity and raising the quality of service.
The new modules use TSV (which stands for ‘through silicon via’), which is an advanced chip packaging technology that vertically connects DRAM chip dies using electrodes that penetrate the micron-thick dies through microscopic holes. Samsung first used this when it introduced its 3D TSV DDR4 DRAM (64GB) in 2014. TSV is used again in this new dual inline memory module (RDIMM) which, claims Samsung, opens the door for ultra-high capacity memory at the enterprise level.
The 128GB TSV DDR4 RDIMM is comprised of a total of 144 DDR4 chips, arranged into 36 4GB DRAM packages, each containing four 20-nanometer (nm)-based 8-gigabit (Gb) chips assembled with TSV packaging technology.
Unlike conventional chip packages, which interconnect die stacks with wire bonding, the TSV packages interconnect through hundreds of fine holes and vertically connected by electrodes passing through the holes. This creates a massive improvement in signal transmission speeds. In addition the Samsung’s 128GB TSV DDR4 module has a special data buffer function that improves module performance and lowers power consumption.
As a result servers can reach 2,400 megabits per second (Mbps), roughly twice their normal speed at half the power usage. Samsung says it’s now accelerating production of TSV technology to ramp up 20nm 8GB DRAM chips to improve manufacturing productivity.
“We will continue to expand our technical cooperation with global leaders in servers, consumer electronics and emerging markets,” said Joo Sun Choi, executive vice president of Memory Sales and Marketing at Samsung Electronics.